BS N-channel Enhancement Mode Field Effect Transistor. Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS. BS Transistor Datasheet, BS Equivalent, PDF Data Sheets. Type Designator: BS MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS/D TMOS FET Switching N Channel Enhancement BS October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Please see the information tables in this datasheet for details. Power mosfet.
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Bss8 nchannel logic level enhancement mode field effect. Please allow business days for a response. This datasheet provides information about parts that are rohscompliant and or parts that are nonrohscompliant.
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This datasheet contains preliminary data, and supplementary data will be published at a. July 20 diodes incorporated 2n nchannel enhancement mode. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. Bfc limiting values in accordance with the absolute maximum rating system iec 4. Nchannel mosfet g d s toab g d s available dataasheet ordering information information package toab lead pb.
It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.
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Source drain diode symbol parameter test conditions min.